(Hong Kong)
Product Summary
The BUT11A is an NPN power transistor. It is a silicon multiepitaxial mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switching application. The applications of the BUT11A include flyback and forward single, transistor low power converters.
Parametrics
BUT11A absolute maximum ratings: (1)VCES Collector-Emitter Voltage (VBE = 0V): 1000V; (2)VCEO Collector-Emitter Voltage (IB = 0): 450V; (3)VEBO Emitter-Base Voltage (IC = 0): 9V; (4)IC Collector Current: 5A; (5)ICM Collector Peak Current: 10A; (6)IB Base Current: 2A; (7)IBM Base Peak Current: 4A; (8)Ptot Total Power Dissipation at Tc≤25℃: 83W; (9)Tstg Storage Temperature: -65℃ to 150℃; (10)Tj Max. Operating Junction Temperature: 150℃.
Features
BUT11A features: (1) SGS-thomson preferred salestype; (2) NPN transistor; (3) high voltage capability; (4) fast switching speed.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BUT11A |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
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BUT11AFTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
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BUT11AI,127 |
NXP Semiconductors |
Transistors Bipolar (BJT) BUT11AI/SOT78/RAILH// |
Data Sheet |
Negotiable |
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BUT11APX |
NXP Semiconductors |
Transistors Bipolar (BJT) RAIL PWR-MOS |
Data Sheet |
Negotiable |
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BUT11APX,127 |
NXP Semiconductors |
Transistors Bipolar (BJT) RAIL PWR-MOS |
Data Sheet |
Negotiable |
|
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 |
BUT11APX-1200,127 |
NXP Semiconductors |
Transistors Bipolar (BJT) BUT11APX-1200/SOT186A/RAILH// |
Data Sheet |
Negotiable |
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BUT11ATU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Si Transistor |
Data Sheet |
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BUT11AX |
Other |
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Data Sheet |
Negotiable |
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