IRFS450B

IRFS450B, 500V, N-Channel MOSFET, TO-3PF, 38.4A, 990mJ, 6.1A

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Price:: US $0.71~1.27 / piece [Get Latest Price]

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	US $0.71~1.27

PartNumber:: IRFS450B

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 11+

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Products Upload time: 2012-07-05

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Part Number:IRFS450B
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Product Summary

The IRFS450B is a 500V N-Channel MOSFET. It is produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Parametrics

IRFS450B absolute maximum ratings: (1)VDSS Drain-Source Voltage: 500 V; (2)ID Drain Current when Continuous (TC = 25℃): 9.6A; when Continuous (TC = 100℃): 6.1A; (3)IDM Drain Current - Pulsed: 38.4A; (4)VGSS Gate-Source Voltage: ±30 V; (5)EAS Single Pulsed Avalanche Energy: 990mJ; (6)IAR Avalanche Current: 9.6A; (7)EAR Repetitive Avalanche Energy: 9.6mJ; (8)Peak Diode Recovery dv/dt: 5.5 V/ns; (9)PD Power Dissipation (TC = 25℃): 96W; Derate above 25℃: 0.77 W/℃; (10)TSTG Operating and Storage Temperature Range: -55℃ to +150℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300℃.

Features

IRFS450B features: (1)9.6A, 500V, RDS (on) = 0.39Ω@VGS = 10 V; (2) Low gate charge (typical 87nC); (3) Low Crss ( typical 60pF); (4) Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.