Product Summary
The 2SC2735JTR is a Silicon NPN Epitaxial. The applications of the 2SC2735JTR include UHF/VHF Local oscillator, frequency converter.
Parametrics
2SC2735JTR absolute maximum ratings: (1)Collector to base voltage VCBO: 30V; (2)Collector to emitter voltage VCEO: 20V; (3)Emitter to base voltage VEBO: 3V; (4)Collector current IC: 50mA; (5)Collector power dissipation PC: 150mW; (6)Junction temperature Tj: 150℃; (7)Storage temperature Tstg: –55℃ to +150℃.
Features
2SC2735JTR features: (1) Collector to base breakdown voltage: 30V; (2) Collector to emitter breakdown voltage: 20V; (3) Emitter to base breakdown voltage: 3V; (4)Collector cutoff current: 0.5μA; (5)Collector to emitter saturation voltage: 1.0V; (6)Collector output capacitance: 1.5pF; (7)Conversion gain: 21dB.
Diagrams
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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