Product Summary

The IRF9530NPBF is a Power MOSFET. The IRF9530NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF9530NPBF absolute maximum ratings: (1)Pulsed Drain Current: -56; (2)Power Dissipation: 3.8W; (3)Power Dissipation: 79W; (4)Linear Derating Factor: 0.53 W/℃; (5)Gate-to-Source Voltage: ± 20V; (6)Single Pulse Avalanche Energy: 250mJ; (7)Avalanche Current: -8.4 A; (8)Repetitive Avalanche Energy: 7.9mJ; (9)Peak Diode Recovery dv/dt: -5.0 V/ns; (10)Operating Junction and Storage Temperature Range:-55℃ to 175℃.

Features

IRF9530NPBF features: (1) Advanced Process Technology; (2) Surface Mount; (3)175℃ Operating Temperature; (4) Fast Switching; (5)P-Channel; (6)Fully Avalanche Rated.

Diagrams

IRF9530NPBF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF9530NPBF
IRF9530NPBF
International Rectifier
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Data Sheet
0-1: $1.38
1-25: $0.85
25-100: $0.58
100-250: $0.55
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0-1: $1.37
1-25: $0.89
25-100: $0.64
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