(Hong Kong)
Product Summary
The BUZ60 is a power transistor.
Parametrics
BUZ60 absolute maximum ratings: (1)Continuous drain current TC = 36℃: 5.5A; (2)Pulsed drain current TC = 25℃: 22A; (3)Avalanche current, limited by Tjmax: 5.5A; (4)Avalanche energy, periodic limited by Tjmax: 8mJ; (5)Avalanche energy, single pulse ID = 5.5A, VDD = 50V, RGS = 25W; (6)L = 18.5mH, Tj = 25℃: 320mJ; (7)Gate source voltage: ±20 V; (8)Power dissipation TC = 25℃: 75W; (9)Operating temperature: -55℃ to + 150℃; (10)Storage temperature: -55℃ to + 150℃; (11)Thermal resistance, chip case: ≤1.67K/W; (12)Thermal resistance, chip to ambient: 75K/W; (13) DIN humidity category, DIN 40 040: E K/W; (14) IEC climatic category, DIN IEC 68-1: 55/150/56: K/W.
Features
BUZ60 features: (1) N channel; (2) Enhancement mode; (3) Avalanche-rated.
Diagrams
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Pricing (USD) |
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 BUZ60 |
Other |
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Data Sheet |
Negotiable |
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BUZ60B |
Other |
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Data Sheet |
Negotiable |
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