Product Summary

The IRG4PH50U is an insulated gate bipolar transistor. The benefits of the IRG4PH50U include Higher switching frequency capability than competitive IGBTs, Highest efficiency available, much lower conduction losses than MOSFETs, More efficient than short circuit rated IGBTs.

Parametrics

IRG4PH50U absolute maximum ratings: (1)VCES Collector-to-Emitter Breakdown Voltage: 1200V; (2)IC @ TC = 25℃ Continuous Collector Current: 45V; (3)IC @ TC = 100℃ Continuous Collector Current: 24A; (4)ICM Pulsed Collector Current: 180A; (5)ILM Clamped Inductive Load Current: 180A; (6)VGE Gate-to-Emitter Voltage: ±20V; (7)EARV Reverse Voltage Avalanche Energy: 170mJ; (8)PD @ TC = 25℃ Maximum Power Dissipation: 200W; (9)PD @ TC = 100℃ Maximum Power Dissipation: 78W; (10)TJ Operating Junction and TSTG Storage Temperature Range: -55℃ to + 150℃; (11)Soldering Temperature, for 10 seconds: 300℃.

Features

IRG4PH50U features: (1)UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode; (2)New IGBT design provides tighter parameter distribution and higher efficiency than previous generations; (3) Optimized for power conversion; SMPS, UPS and welding; (4) Industry standard TO-247AC package.

Diagrams

IRG4PH50U block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRG4PH50U
IRG4PH50U

International Rectifier

IGBT UFAST 1200V 45A TO-247AC

Data Sheet

1-100: $2.88
IRG4PH50UD
IRG4PH50UD

International Rectifier

IGBT W/DIODE 1200V 45A TO-247AC

Data Sheet

1-75: $5.01
IRG4PH50UPBF
IRG4PH50UPBF

International Rectifier

IGBT Transistors

Data Sheet

0-3000: $2.12
IRG4PH50UDPBF
IRG4PH50UDPBF

International Rectifier

IGBT Transistors

Data Sheet

0-2819: $3.33