(Hong Kong)
Product Summary
The IRFPS3810 is a power MOSFET. The IRFPS3810 is from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFPS3810 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 170A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 120A; (3)IDM Pulsed Drain Current: 670A; (4)PD @TC = 25℃ Power Dissipation: 580W; (5)Linear Derating Factor: 3.8W/℃; (6)VGS Gate-to-Source Voltage: ±30 V; (7)EAS Single Pulse Avalanche Energy: 1350mJ; (8)IAR Avalanche Current: 100A; (9)EAR Repetitive Avalanche Energy: 58mJ; (10)Peak Diode Recovery: 2.3V/ns; (11)Operating Junction and Storage Temperature Range: -55℃ to + 175℃; (12)Soldering Temperature, for 10 seconds: 300℃(1.6mm from case).
Features
IRFPS3810 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6) Fully Avalanche Rated.
Diagrams
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Pricing (USD) |
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 IRFPS3810 |
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MOSFET N-CH 100V 170A SUPER247 |
Data Sheet |
Negotiable |
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IRFPS3810PBF |
International Rectifier |
MOSFET |
Data Sheet |
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