Product Summary
The IRF840 is a power MOSFET. The IRF840 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of the IRF840 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
IRF840 absolute maximum ratings: (1)Drain-Source Voltage: 500 V; (2)Gate-Source Voltage: ± 20 V; (3)Continuous Drain Current VGS at 10 V: 8.0 A at TC = 25 ℃, 5.1 A at TC = 100 ℃; (4)Pulsed Drain Current: 32A; (5)Linear Derating Factor: 1.0W/℃; (6)Single Pulse Avalanche Energy : 510mJ; (7)Repetitive Avalanche Current a: 8.0A; (8)Repetitive Avalanche Energy : 13mJ; (9)Maximum Power Dissipation at TC = 25 ℃: 125 W; (10)Peak Diode Recovery dV/dt: 3.5 V/ns; (11)Operating Junction and Storage Temperature Range: -55℃ to + 150℃; (12)Soldering Recommendations (Peak Temperature) for 10 s: 300℃.
Features
IRF840 features: (1) Dynamic dV/dt Rating; (2) Repetitive Avalanche Rated; (3) Fast Switching; (4) Ease of Paralleling; (5) Simple Drive Requirements; (6) Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF840, SiHF840 |
Other |
Data Sheet |
Negotiable |
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IRF840_R4943 |
Fairchild Semiconductor |
MOSFET N-CH POWER |
Data Sheet |
Negotiable |
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IRF840A |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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IRF840A, SiHF840A |
Other |
Data Sheet |
Negotiable |
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IRF840AL |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
Negotiable |
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IRF840APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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IRF840AS |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
Negotiable |
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IRF840ASPBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 8.0 Amp |
Data Sheet |
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