IRFP260NPBF

IRFP260NPBF, HEXFET Power MOSFET, TO-247AC, 200V, 49A, International Rectifier

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.63~1.33 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.63~1.33

PartNumber:: IRFP260NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 12+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Rosy's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-07-26

From Other Seller

Part Number:IRFP260NPBF
US $0.63 - 1.33
AT24C02BN-SH-T

US $0.08 - 0.15 / Piece
(0) Remove
RTL8102EL

US $1.00 - 2.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The IRFP260NPBF is a Fifth Generation HEXFET from International Rectifier. The IRFP260NPBF utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFP260NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 device. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Parametrics

IRFP260NPBF absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 50A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 35A; (3)Pulsed Drain Current, IDM: 200A; (4)PD @TC = 25℃, Power Dissipation: 300W; (5)Linear Derating Factor: 2.0 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Single Pulse Avalanche Energy, EAS: 560mJ; (8)Avalanche Current, IAR: 50 A; (9)Repetitive Avalanche Energy, EAR: 30mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 10V/ns; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case).

Features

IRFP260NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5) Fully Avalanche Rated; (6) Ease of Paralleling; (7) Simple Drive Requirements; (8) Lead-Free.