Product Summary
The IRF640 is a Third generation Power MOSFET from Vishay. The IRF640 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the IRF640PBF contribute to its wide acceptance throughout the industry.
Parametrics
IRF640 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 200V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current, VGS at 10V, TC=25℃, ID: 18A; (4)Continuous Drain Current, VGS at 10V, TC = 100℃, ID: 11A; (5)Pulsed Drain Currenta, IDM: 72A; (6)Linear Derating Factor: 1.0 W/℃; (7)Single Pulse Avalanche Energy, EAS: 580mJ; (8)Repetitive Avalanche Current, IAR: 18A; (9)Repetitive Avalanche Energy, EAR: 13mJ; (10)Maximum Power Dissipation, TC = 25 ℃, PD: 125 W; (11)Peak Diode Recovery, dV/dt: 5.0V/ns; (12)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to +150℃; (13)Mounting Torque, 6-32 or M3 screw: 10 lbf•in(1.1N•m).
Features
IRF640 features: (1) Dynamic dV/dt Rating; (2) Repetitive Avalanche Rated; (3) Fast Switching; (4) Ease of Paralleling; (5) Simple Drive Requirements; (6) Lead (Pb)-free Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF640 |
Vishay/Siliconix |
MOSFET N-Chan 200V 18 Amp |
Data Sheet |
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IRF640,127 |
MOSFET N-CH 200V 16A TO-220AB |
Data Sheet |
Negotiable |
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IRF640_R4941 |
Fairchild Semiconductor |
MOSFET TO-220 N-CH 200V 18A |
Data Sheet |
Negotiable |
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IRF640B |
Other |
Data Sheet |
Negotiable |
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IRF640B_FP001 |
Fairchild Semiconductor |
MOSFET 200V Single |
Data Sheet |
Negotiable |
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IRF640B_FP001_Q |
Fairchild Semiconductor |
MOSFET 200V Single |
Data Sheet |
Negotiable |
|
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IRF640N |
MOSFET N-CH 200V 18A TO-220AB |
Data Sheet |
Negotiable |
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IRF640N_R4942 |
Fairchild Semiconductor |
MOSFET TO-220AB |
Data Sheet |
Negotiable |
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