(Hong Kong)
Product Summary
The IXTP80N10T is a Power MOSFET. The applications of the IXTP80N10T include Automotive Motor Drives, DC/DC Conversion, 42V Power Bus, ABS Systems, DC/DC Converters and Off-Line UPS, Primary Switch for 24V and 48V Systems, High Current Switching Applications, Distributed Power Architectures and VRMs, Electronic Valve Train Systems.
Parametrics
IXTP80N10T absolute maximum ratings: (1)VDSS at TJ = 25℃ to 175℃: 100V; (2)VDGR at TJ = 25℃ to 175℃, RGS = 1MΩ: 100V; (3)VGSS Continuous: ±20V; (4)VGSM Transient: ±30V; (5)ID25 TC = 25℃: 80A; (6)IDM TC = 25℃, Pulse Width Limited by TJM: 220A; (7)IA TC = 25℃: 25A; (8)EAS TC = 25℃: 400mJ; (9)PD TC = 25℃: 230W; (10)dV/dt IS≤IDM, VDD≤VDSS, TJ≤175℃: 10 V/ns; (11)TJ: -55℃ to +175℃; (12)TJM: 175℃; (13)Tstg: -55℃ to +175℃; (14)TL 1.6mm (0.062 in.) from Case for 10s: 300℃; (15) TSOLD Plastic Body for 10s: 260℃; (16) Weight: 3.0g.
Features
IXTP80N10T features: (1)International Standard Packages; (2)175℃ Operating Temperature; (3) Avalanche Rated; (4) High Current Handling Capability; (5) Fast Intrinsic Diode; (6) Low RDS.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IXTP80N10T |
Ixys |
MOSFET 80 Amps 100V 13.0 Rds |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||
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IXTP 3N120 |
Other |
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Data Sheet |
Negotiable |
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IXTP01N100D |
Ixys |
MOSFET 0.1 Amps 1000V 110 Rds |
Data Sheet |
Negotiable |
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IXTP02N120P |
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MOSFET N-CH 1200V 200MA TO-220 |
Data Sheet |
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IXTP05N100 |
Ixys |
MOSFET 0.75 Amps 1000V 15 Rds |
Data Sheet |
Negotiable |
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IXTP05N100M |
Ixys |
MOSFET 0.5 Amps 1000V |
Data Sheet |
Negotiable |
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IXTP05N100P |
Ixys |
MOSFET Polar Pwr MOSFET 1KV w/reduced Rds(on) |
Data Sheet |
Negotiable |
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