(Hong Kong)
Product Summary
The BT136-600E is a glass passivated triac in a plastic envelope. The device is intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Thypical applications of the BT136-600E include motor control, industrial and domestic lighting, heating and static switching.
Parametrics
BT136-600E absolute maximum ratings: (1)VDRM, Repetitive peak off-state voltages: 600V; (2)IT(RMS), RMS on-state current: 4A when full sine wave; Tlead≤51℃; (3)ITSM, Non-repetitive peak full sine wave; Tj = 25℃ prior to on-state current surge: 25A when t=20ms; (4)I2t, I2t for fusing t = 10 ms: 3.1A2s; (5)dIT/dt Repetitive rate of rise ofon-state current after triggering, ITM = 1.5 A; IG = 0.2 A, dIG/dt = 0.2 A/ μs, T2+ G+: 50 A/μs; T2+ G: 50 A/μs; T2- G: 50 A/μs; T2- G+: 10 A/μs; (6)IGM, Peak gate current: 2 A; (10)VGM, Peak gate voltage: 5 V; (7)PGM, Peak gate power: 5 W; (8)PG(AV), Average gate power over any 20 ms period: 0.5 W; (9)Tstg, Storage temperature: -40 TO 150℃; (10)Tj, Operating junction temperature: 125℃.
Features
BT136-600E features: (1)VDRM, repetitive peak off-state voltages: 600V; (2)IT(RMS), RMS on-state current: 4A; (3)ITSM, non-repetitive peak on-state current: 25A.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BT136-600E |
NXP Semiconductors |
Triacs RAIL TRIAC |
Data Sheet |
Negotiable |
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BT136-600E,127 |
NXP Semiconductors |
Triacs RAIL TRIAC |
Data Sheet |
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BT136-600E/L01,127 |
NXP Semiconductors |
Triacs Thyristor TRIAC 600V 27A 3-Pin (3+Tab) |
Data Sheet |
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BT136-600E/02,127 |
NXP Semiconductors |
Triacs Thyristor TRIAC 600V 27A 3-Pin (3+Tab) |
Data Sheet |
Negotiable |
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